WO2025076203 - ACTIVELY HEATED TARGET TO GENERATE AN ION BEAM
National phase entry is expected:
Publication Number
WO/2025/076203
Publication Date
10.04.2025
International Application No.
PCT/US2024/049768
International Filing Date
03.10.2024
Title **
[English]
ACTIVELY HEATED TARGET TO GENERATE AN ION BEAM
[French]
CIBLE CHAUFFÉE ACTIVEMENT POUR GÉNÉRER UN FAISCEAU D'IONS
Applicants **
AXCELIS TECHNOLOGIES, INC.
Inventors
COLVIN, Neil
BASSOM, Neil
ABESHAUS, Joshua
Priority Data
63/588,110
05.10.2023
US
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| Number of Office Actions | * |
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International Searching Authority |
EPO
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
| * | |
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2312 | |
| EPO | Filing, Examination, Granting | 13289 | |
| Japan | Filing, Examination, Granting | 2482 | |
| South Korea | Filing, Examination, Granting | 2669 | |
| USA | Filing, Examination, Granting | 5740 |
Total:
26,492
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
An arc chamber for an ion source defines a chamber volume, and a target material is disposed within the chamber volume. The target material comprises a dopant species and can be contained in a target member. An indirectly heated cathode is positioned within the chamber volume and ionizes a source gas within the chamber volume, defining a plasma having a plasma thermal emission. A target heater selectively heats the target material independently from the plasma thermal emission associated with the plasma. The target heater can be a resistive heating element, inductive heating element, halogen heating element, or a laser configured to selectively heat at least a portion of the target member. The target member can consist of a solid dopant material or can contain a liquid dopant material.[French]
Une chambre à arc pour une source d'ions définit un volume de chambre, et un matériau cible est disposé à l'intérieur du volume de chambre. Le matériau cible consiste en une espèce dopante et peut être contenu dans un élément cible. Une cathode chauffée indirectement est positionnée à l'intérieur du volume de chambre et ionise un gaz source à l'intérieur du volume de chambre, définissant un plasma possédant une émission thermique de plasma. Un dispositif de chauffage cible chauffe sélectivement le matériau cible indépendamment de l'émission thermique de plasma associée au plasma. Le dispositif de chauffage cible peut être un élément chauffant résistif, un élément chauffant inductif, un élément chauffant halogène ou un laser configuré pour chauffer sélectivement au moins une partie de l'élément cible. L'élément cible peut être constitué d'un matériau dopant solide ou peut contenir un matériau dopant liquide.