WO2024151763 - COLOR-TUNABLE LED ELEMENTS AND DISPLAY SYSTEMS AND METHODS THEREOF

National phase entry is expected:
Publication Number WO/2024/151763
Publication Date 18.07.2024
International Application No. PCT/US2024/011084
International Filing Date 10.01.2024
Title **
[English] COLOR-TUNABLE LED ELEMENTS AND DISPLAY SYSTEMS AND METHODS THEREOF
[French] ÉLÉMENTS À DEL ACCORDABLES EN COULEUR ET SYSTÈMES D'AFFICHAGE ET PROCÉDÉS ASSOCIÉS
Applicants **
INNOVATION SEMICONDUCTOR
Inventors
HARTENSVELD, Matthew, T.
Priority Data
63/438,435   11.01.2023   US
18/409,112   10.01.2024   US
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Quotation for National Phase entry

Country StagesTotal
China Filing, Examination, Granting2476
EPO Filing, Examination, Granting17208
Japan Filing, Examination, Granting2502
South Korea Filing, Examination, Granting2875
USA Filing, Examination, Granting5510
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Total: 30,571

The term for entry into the National Phase has expired. This quotation is for informational purposes only

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Abstract[English] A color-tunable LED system configured to emit a variety of peak wavelengths of light in response to variations in a driving current density includes an n-type region, a p-type region, and a multiple quantum well (MQW) region formed between the n-type region and the p-type region. The MQW region includes parallel layers, each alloyed with a percentage of Indium, to enable a range of light emission between 400 and 600 nm, and one or more shaped depressions formed within a portion of the parallel layers. Each of the one or more shaped depressions has a lower concentration of the alloyed percentage of the Indium than other portions of the parallel layers. Transition regions between the one or more shaped depressions and the other portions of the parallel layers have a higher concentration of the alloyed percentage of the Indium which decreases with distance from the one or more shaped depressions.[French] Un système à DEL accordable en couleur configuré pour émettre diverses longueurs d'onde de pic d'une lumière en réponse à des variations d'une densité de courant d'attaque comprend une région de type n, une région de type p et une région de multipuits quantique (MQW) formée entre la région de type n et la région de type p. La région MQW comprend des couches parallèles, chacune étant alliée à un pourcentage d'indium pour assurer une plage d'émission de lumière entre 400 et 600 nm, et une ou plusieurs dépressions formées à l'intérieur d'une partie des couches parallèles. Chacune des dépressions formées présente une concentration inférieure du pourcentage allié de l'indium relativement à d'autres parties des couches parallèles. Des régions de transition entre la ou les dépressions formées et les autres parties des couches parallèles présentent une concentration supérieure du pourcentage allié de l'indium qui diminue avec la distance depuis la ou les dépressions formées.

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