WO2023204878 - CIRCUIT ARCHITECTURE AND LAYOUT FOR A VOTING INTERLOCKED LOGIC CELL

National phase entry:
Publication Number WO/2023/204878
Publication Date 26.10.2023
International Application No. PCT/US2023/000021
International Filing Date 24.05.2023
Title **
[English] CIRCUIT ARCHITECTURE AND LAYOUT FOR A VOTING INTERLOCKED LOGIC CELL
[French] ARCHITECTURE DE CIRCUIT ET AGENCEMENT POUR UNE CELLULE LOGIQUE INTERVERROUILLÉE DE VOTE
Applicants **
LILJA, Klas
Inventors
LILJA, Klas
Priority Data
17/803,280   18.04.2022   US
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Quotation for National Phase entry

Country StagesTotal
China Filing, Examination, Granting2198
EPO Filing, Examination, Granting9313
Japan Filing, Examination, Granting1928
South Korea Filing, Examination, Granting1589
USA Filing, Examination, Granting4310
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Total: 19,338

The term for entry into the National Phase has expired. This quotation is for informational purposes only

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Abstract[English] This invention comprises an integrated circuit in CMOS technology which can act as a regular sequential logic latch, having one data signal input, or as a voting latch, having three data signal inputs. The circuit schematic of this integrated circuit is such that it allows for a certain placement of the devices in the physical, manufactured integrated circuit that makes it possible to optimize the arrangement of the n-type MOSFET devices and p-type MOSFET devices in the circuit independently, using the Layout Optimization through Error Aware Positioning (LEAP), and thereby to remove, or reduce, the occurrence of radiation generated soft errors.[French] La présente invention comprend un circuit intégré en technologie CMOS qui peut agir en tant que verrou logique séquentiel régulier, ayant une entrée de signal de données, ou en tant que verrou de vote, ayant trois entrées de signal de données. Le schéma de circuit de ce circuit intégré est tel qu'il permet un certain placement des dispositifs dans le circuit intégré physique fabriqué qui permet d'optimiser l'agencement des dispositifs MOSFET de type n et des dispositifs MOSFET de type p dans le circuit indépendamment, à l'aide de l'optimisation de disposition par l'intermédiaire d'un positionnement sensible aux erreurs (LEAP), et ainsi d'éliminer, ou de réduire, l'apparition d'erreurs logicielles générées par rayonnement.

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