WO2024172755 - SILICON PHOTONIC DEVICE FOR GENERATING LASER LIGHT
National phase entry:
Publication Number
WO/2024/172755
Publication Date
22.08.2024
International Application No.
PCT/SG2023/050084
International Filing Date
14.02.2023
Title **
[English]
SILICON PHOTONIC DEVICE FOR GENERATING LASER LIGHT
[French]
DISPOSITIF PHOTONIQUE AU SILICIUM DESTINÉ À GÉNÉRER UNE LUMIÈRE LASER
Applicants **
COMPOUNDTEK PTE. LTD.
NANYANG TECHNOLOGICAL UNIVERSITY
Inventors
BRIAN SIA, Jia Xu
WANG, Hong
ANG, Kian Siong
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| Number of Office Actions | * |
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International Searching Authority |
MOIP
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
| * | |
| * | |
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 1882 | |
| EPO | Filing, Examination, Granting | 11629 | |
| Japan | Filing, Examination, Granting | 1985 | |
| South Korea | Filing, Examination, Granting | 1331 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
21,567
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
The present invention relates to a silicon photonic device (100) for generating laser light. The device (100) comprises a substrate and at least one laser cavity (10, 20, 30) fabricated on the substrate. Each laser cavity (10, 20, 30) is formed with at least one III-V-based gain section (11, 21, 31), at least two microring resonators (MRR) (12, 13, 22, 23, 32, 33) and at least one partial reflector (14, 24, 34). An interposer (15, 25, 35) optically couples each gain section (11, 21, 31) with a corresponding MRR (12, 22, 23). At least one thermo-optic heater is on each MRR (12, 13, 22, 23, 32, 33) for controlling wavelength selectivity of the corresponding MRR (12, 13, 22, 23, 32, 33).[French]
La présente invention concerne un dispositif photonique au silicium (100) destiné à générer une lumière laser. Le dispositif (100) comprend un substrat et au moins une cavité laser (10, 20, 30) fabriquée sur le substrat. Chaque cavité laser (10, 20, 30) est formée de manière à présenter au moins une section de gain à base de matériau des groupes III-V (11, 21, 31), au moins deux résonateurs à micro-anneaux (MRR) (12, 13, 22, 23, 32, 33) et au moins un réflecteur partiel (14, 24, 34). Un élément d'interposition (15, 25, 35) couple optiquement chaque section de gain (11, 21, 31) à un MRR (12, 22, 23) correspondant. Au moins un élément chauffant thermo-optique est présent sur chaque MRR (12, 13, 22, 23, 32, 33) pour réguler la sélectivité en longueur d'onde du MRR (12, 13, 22, 23, 32, 33) correspondant.