WO2025062235 - SEMICONDUCTOR DEVICE
National phase entry is expected:
Publication Number
WO/2025/062235
Publication Date
27.03.2025
International Application No.
PCT/IB2024/058797
International Filing Date
10.09.2024
Title **
[English]
SEMICONDUCTOR DEVICE
[French]
DISPOSITIF À SEMI-CONDUCTEUR
Applicants **
SILANNA UV TECHNOLOGIES PTE LTD
Inventors
ATANACKOVIC, Petar
Priority Data
63/584,661
22.09.2023
US
18/394,688
22.12.2023
US
18/628,178
05.04.2024
US
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
| * | |
| Number of Office Actions | * |
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International Searching Authority |
EPO
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Patent Delivery |
Send the Letters Patent by Courier
* |
| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 4177 | |
| EPO | Filing, Examination, Granting | 18392 | |
| Japan | Filing, Examination, Granting | 2347 | |
| South Korea | Filing, Examination, Granting | 2493 | |
| USA | Filing, Examination, Granting | 6740 |
Total:
34,149
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
A multilayered semiconductor diode device can include a substrate including silicon carbide (SiC) with an epitaxial drift layer including a first semiconductor oxide material above the SiC substrate with respect to a growth direction. The multilayered semiconductor diode device can further include a polar nitride layer including a polar semiconductor nitride material above the epitaxial drift layer with respect to the growth direction, and a metal layer above the polar nitride layer with respect to the growth direction.[French]
Un dispositif de diode à semi-conducteur multicouche peut comprendre un substrat comprenant du carbure de silicium (SiC) avec une couche de dérive épitaxiale comprenant un premier matériau d'oxyde semi-conducteur au-dessus du substrat de SiC par rapport à une direction de croissance. Le dispositif à diode semi-conductrice multicouche peut en outre comprendre une couche de nitrure polaire comprenant un matériau de nitrure semi-conducteur polaire au-dessus de la couche de dérive épitaxiale par rapport à la direction de croissance, et une couche métallique au-dessus de la couche de nitrure polaire par rapport à la direction de croissance.