WO2025046453 - SEMICONDUCTOR DONOR SUBSTRATES FOR LASER-TRANSFER PRINTING
National phase entry is expected:
Publication Number
WO/2025/046453
Publication Date
06.03.2025
International Application No.
PCT/IB2024/058298
International Filing Date
27.08.2024
Title **
[English]
SEMICONDUCTOR DONOR SUBSTRATES FOR LASER-TRANSFER PRINTING
[French]
SUBSTRATS DONNEURS DE SEMI-CONDUCTEUR POUR IMPRESSION PAR TRANSFERT LASER
Applicants **
YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LLC
SA'AR, Amir
ZENOU, Michael
Inventors
SA'AR, Amir
ZENOU, Michael
Priority Data
63/579,324
29.08.2023
US
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| Number of Office Actions | * |
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International Searching Authority |
EPO
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
* |
| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2205 | |
| EPO | Filing, Examination, Granting | 8793 | |
| Japan | Filing, Examination, Granting | 2178 | |
| South Korea | Filing, Examination, Granting | 2043 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
19,959
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
A donor substrate and methods for fabricating same. The donor substrate consists of an inorganic semiconductor surface (ISS) having a controlled level of dopant atoms therein, the ISS disposed on a transparent substrate suitable for use in a direct laser-transfer printing process to print conducting patterns of semiconductors having variable electrical conductivity on a receiving substrate. The ISS may include at least one intrinsic inorganic material and one extrinsic inorganic material(s) (e.g., doped semiconductor material) formed as separate layers, or may be constructed of a single material layer comprising both the intrinsic and the extrinsic inorganic semiconductor materials. In some instances, the ISS may be a multilayered film made up of multiple layers of different undoped and/or doped inorganic semiconductor materials, and/or layers of the same inorganic semiconductor material, and/or mixed layers of doped semiconductor materials and undoped semiconductor materials.[French]
L'invention concerne un substrat donneur et ses procédés de fabrication. Le substrat donneur est constitué d'une surface semi-conductrice inorganique (ISS) ayant un niveau contrôlé d'atomes dopants dans celle-ci, l'ISS étant disposée sur un substrat transparent approprié pour être utilisé dans un procédé d'impression par transfert laser direct pour imprimer des motifs conducteurs de semi-conducteurs ayant une conductivité électrique variable sur un substrat de réception. L'ISS peut comprendre au moins un matériau inorganique intrinsèque et un ou plusieurs matériaux inorganiques extrinsèques (par exemple un matériau semi-conducteur dopé) formés en couches distinctes, ou peut être constitué d'une couche de matériau unique comprenant à la fois les matériaux semi-conducteurs inorganiques intrinsèques et extrinsèques. Dans certains cas, l'ISS peut être un film multicouche constitué de multiples couches de différents matériaux semi-conducteurs inorganiques non dopés et/ou dopés, et/ou des couches du même matériau semi-conducteur inorganique, et/ou des couches mixtes de matériaux semi-conducteurs dopés et de matériaux semi-conducteurs non dopés.