WO2023194828 - SINGLE-FET PULSED LASER DIODE DRIVER
National phase entry:
Publication Number
WO/2023/194828
Publication Date
12.10.2023
International Application No.
PCT/IB2023/052658
International Filing Date
17.03.2023
Title **
[English]
SINGLE-FET PULSED LASER DIODE DRIVER
[French]
CIRCUIT D'ATTAQUE DE DIODE LASER PULSÉE À UN SEUL TRANSISTOR À EFFET DE CHAMP
Applicants **
SILANNA ASIA PTE LTD
Inventors
COLLES, Joseph H.
ROSENBAUM, Steven E.
MOLIN, Stuart B.
Priority Data
17/657,973
05.04.2022
US
17/661,184
28.04.2022
US
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| Number of Office Actions | * |
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International Searching Authority |
MOIP
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2916 | |
| EPO | Filing, Examination, Granting | 16140 | |
| Japan | Filing, Examination, Granting | 2306 | |
| South Korea | Filing, Examination, Granting | 1852 | |
| USA | Filing, Examination, Granting | 5190 |
Total:
28,404
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
A pulsed laser diode driver includes multiple resonant laser diode driver cells, each cell including an inductor having a first inductor terminal to receive a source voltage, a source capacitor coupled between the first inductor terminal and ground, a bypass capacitor having a first terminal connected to the first inductor terminal and a second terminal connected to a second inductor terminal, a laser diode having a cathode that is connected to the first inductor terminal and an anode that is connected to the second inductor terminal, and a bypass switch connected between the second inductor terminal and ground. Each cell's bypass switch is configured to control a current flow through that cell's respective inductor to produce a high-current pulse through that cell's laser diode, the high-current pulse corresponding to a peak current of a resonant waveform developed at the anode of that cell's laser diode.[French]
Un circuit d'attaque de diode laser pulsée comprend de multiples cellules d'attaque de diode laser résonantes, chaque cellule comprenant une inductance ayant une première borne d'inductance destinée à recevoir une tension de source, un condensateur de source couplé entre la première borne d'inductance et la masse, un condensateur de dérivation ayant une première borne connectée à la première borne d'inductance et une seconde borne connectée à une seconde borne d'inductance, une diode laser ayant une cathode qui est connectée à la première borne d'inductance et une anode qui est connectée à la seconde borne d'inductance, et un interrupteur de dérivation connecté entre la seconde borne d'inductance et la masse. Chaque interrupteur de dérivation de la cellule est configuré pour commander la circulation d'un courant dans l'inductance respective de la cellule afin de produire une impulsion de courant fort dans la diode laser de la cellule, l'impulsion de courant fort correspondant à un courant de crête d'une forme d'onde résonante développée à l'anode de la diode laser de cette cellule.