WO2023156923 - LAYERED SEMICONDUCTOR DEVICE HAVING COMMON CONDUCTIVE COATING ACROSS LONGITUDINAL DISCONTINUITIES
National phase entry:
Publication Number
WO/2023/156923
Publication Date
24.08.2023
International Application No.
PCT/IB2023/051386
International Filing Date
16.02.2023
Title **
[English]
LAYERED SEMICONDUCTOR DEVICE HAVING COMMON CONDUCTIVE COATING ACROSS LONGITUDINAL DISCONTINUITIES
[French]
DISPOSITIF À SEMI-CONDUCTEUR STRATIFIÉ AYANT UN REVÊTEMENT CONDUCTEUR COMMUN SUR DES DISCONTINUITÉS LONGITUDINALES
Applicants **
OTI LUMIONICS INC.
Inventors
WANG, Zhibin
CHANG, Yi-Lu
WANG, Qi
Priority Data
63/310,971
16.02.2022
US
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
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International Searching Authority |
CIPO
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| * | |
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 4275 | |
| EPO | Filing, Examination, Granting | 22090 | |
| Japan | Filing, Examination, Granting | 2335 | |
| South Korea | Filing, Examination, Granting | 2431 | |
| USA | Filing, Examination, Granting | 6540 |
Total:
37,671
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
An opto-electronic device having a plurality of layers, comprises first electrode(s), layered stacks, both extending in a lateral aspect, and a deposited material. A first electrode has an associated emissive region. Each stack comprises a second electrode between a semiconducting layer and a patterning coating, a first one on a first electrode surface, and a second one on a structure surface adjacent thereto, separated by a first gap, that has a lateral component parallel to, and/or a longitudinal component transverse to, the lateral aspect. The material is disposed thereon for electrically coupling corresponding layer(s) of the first and second stacks, including the second electrode.[French]
La présente invention concerne un dispositif optoélectronique composé d'une pluralité de couches, comprenant au moins une première électrode, des empilements de couches, s'étendant tous deux selon un aspect latéral, ainsi qu'un matériau déposé. Une première électrode comprend une région émissive associée. Chaque empilement comprend une seconde électrode entre une couche semi-conductrice et un revêtement de structuration, une première sur une première surface d'électrode et une seconde sur une surface de structure adjacente, séparées par un premier espace, qui a une composante latérale parallèle à l'aspect latéral et/ou une composante longitudinale transversale à l'aspect latéral. Le matériau est disposé pour coupler électriquement une ou plusieurs couches correspondantes des premier et second empilements, comprenant la seconde électrode.