WO2023119165 - COMPOUNDS COMPRISING A PLURALITY OF SILSESQUIOXANE GROUPS FOR FORMING A PATTERNING COATING AND DEVICES INCORPORATING SAME
National phase entry:
Publication Number
WO/2023/119165
Publication Date
29.06.2023
International Application No.
PCT/IB2022/062560
International Filing Date
20.12.2022
Title **
[English]
COMPOUNDS COMPRISING A PLURALITY OF SILSESQUIOXANE GROUPS FOR FORMING A PATTERNING COATING AND DEVICES INCORPORATING SAME
[French]
COMPOSÉS COMPRENANT UNE PLURALITÉ DE GROUPES SILSESQUIOXANE POUR LA FORMATION D'UN REVÊTEMENT DE FORMATION DES MOTIFS, ET DISPOSITIFS LES INCORPORANT
Applicants **
OTI LUMIONICS INC.
Inventors
HELANDER, Michael
Priority Data
63/291,844
20.12.2021
US
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
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| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| Number of Office Actions | * |
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International Searching Authority |
CIPO
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 5879 | |
| EPO | Filing, Examination, Granting | 66420 | |
| Japan | Filing, Examination, Granting | 3993 | |
| South Korea | Filing, Examination, Granting | 5723 | |
| USA | Filing, Examination, Granting | 17390 |
Total:
99,405
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Abstract[English]
A compound, and a layered semiconductor device comprising a patterning coating provided in a first portion of a lateral aspect of the device, the patterning coating comprising the compound. The patterning coating is adapted to impact a propensity of a vapor flux of a deposited material to be condensed thereon. The compound comprises a plurality of silsesquioxane groups, including without limitation, first and second silsesquioxane groups and a linker group bonded to the first silsesquioxane group and the second silsesquioxane group, wherein at least one of the first and second silsesquioxane groups comprises a fluorine-containing moiety. The device comprises a deposited layer provided in a second portion of the lateral aspect of the device, the deposited layer comprising the deposited material.[French]
L'invention concerne un composé, et un dispositif à semi-conducteur en couches comprenant un revêtement de formation des motifs disposé dans une première partie d'un aspect latéral du dispositif, le revêtement de formation des motifs comprenant le composé. Le revêtement de formation des motifs peut être conçu pour influer sur la propension d'un flux de vapeur d'un matériau déposé à se condenser sur celui-ci. Le composé comprend une pluralité de groupes silsesquioxane, y compris sans limitation des premier et second groupes silsesquioxane et un groupe de liaison lié au premier groupe silsesquioxane et au second groupe silsesquioxane, au moins un des premier et second groupes silsesquioxane comprenant une fraction contenant du fluor. Le dispositif comprend une couche déposée disposée dans une seconde partie de l'aspect latéral du dispositif, la couche déposée comprenant le matériau déposé.