WO2023042091 - AMBIPOLAR OXIDE-SEMICONDUCTOR BASED TRANSISTOR AND METHOD OF MANUFACTURING
National phase entry:
Publication Number
WO/2023/042091
Publication Date
23.03.2023
International Application No.
PCT/IB2022/058660
International Filing Date
14.09.2022
Title **
[English]
AMBIPOLAR OXIDE-SEMICONDUCTOR BASED TRANSISTOR AND METHOD OF MANUFACTURING
[French]
TRANSISTOR À BASE D'OXYDE-SEMI-CONDUCTEUR AMBIPOLAIRE ET SON PROCÉDÉ DE FABRICATION
Applicants **
KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
Inventors
LI, Xiaohang
YUVARAJA, Saravanan
Priority Data
63/243,888
14.09.2021
US
63/274,142
01.11.2021
US
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
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| Pages of Specification | * |
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International Searching Authority |
EPO
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2421 | |
| EPO | Filing, Examination, Granting | 11506 | |
| Japan | Filing, Examination, Granting | 2327 | |
| South Korea | Filing, Examination, Granting | 2393 | |
| USA | Filing, Examination, Granting | 8340 |
Total:
26,987
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
An ambipolar, gate all around, semiconductor-based transistor (600) includes a substrate (602), a first-type channel structure (106) of a first-type material located on the substrate (602), the first-type channel structure (106) having a gate region, a source region, and a drain region, a second-type channel structure (310) of a second- type material completely surrounding the gate region of the first-type channel structure (106), but not present on the source region and the drain region. Furthermore, a dielectric material (108) fully surrounds the second-type material (310), a gate electrode (110) completely surrounds the dielectric material (108)., a source electrode is located on the source region and a drain electrode is located on the drain region. The first and second materials are semiconductor oxides, preferably Ga2O3 and NiO, the first-type material is one of p-or n-type and the second-type material is the other of the p- or n-type.[French]
La présente invention concerne un transistor ambipolaire à base de semi-conducteur (600), à grille enveloppante, qui comprend un substrat (602), une structure de canal de premier type (106) constituée d'un matériau de premier type situé sur le substrat (602), la structure de canal de premier type (106) ayant une région de grille, une région de source et une région de drain, une structure de canal de second type (310) constituée d'un matériau de second type entourant complètement la région de grille de la structure de canal de premier type (106), mais n'étant pas présente sur la région de source et la région de drain. En outre, un matériau diélectrique (108) entoure complètement le matériau de second type (310), une électrode de grille (110) entoure complètement le matériau diélectrique (108), une électrode de source est située sur la région de source et une électrode de drain est située sur la région de drain. Les premier et second matériaux sont des oxydes semi-conducteurs, de préférence Ga2O3 et NiO, le matériau de premier type est un matériau de type p ou n et le matériau de second type est un matériau de l'autre type.