WO2026008989 - COMPACT QUANTUM MEMORY DEVICE
National phase entry is expected:
Publication Number
WO/2026/008989
Publication Date
08.01.2026
International Application No.
PCT/GB2025/051463
International Filing Date
03.07.2025
Title **
[English]
COMPACT QUANTUM MEMORY DEVICE
[French]
DISPOSITIF DE MÉMOIRE QUANTIQUE COMPACT
Applicants **
ORCA COMPUTING LIMITED
Inventors
SRIVATHSAN, Bharath
GARTMAN, Rafal
Priority Data
2409748.7
04.07.2024
GB
2503666.6
12.03.2025
GB
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| Number of Office Actions | * |
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International Searching Authority |
EPO
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
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| * | |
| * | |
| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
* |
| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2165 | |
| EPO | Filing, Examination, Granting | 9698 | |
| Japan | Filing, Examination, Granting | 2263 | |
| South Korea | Filing, Examination, Granting | 2269 | |
| USA | Filing, Examination, Granting | 4740 |

Total:
21,135
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Abstract[English]
A quantum memory device for storing a signal field is provided. The quantum memory device comprises an optical cavity comprising a first reflective surface and a second reflective surface; a first optical element and a second optical element arranged within the optical cavity; an atomic system situated between the first optical element and the second optical element, the atomic system configured to store the signal field via an atomic transition; and one or more magnets configured to apply an axial magnetic field across the atomic system.[French]
L'invention concerne un dispositif de mémoire quantique pour stocker un champ de signal. Le dispositif de mémoire quantique comprend une cavité optique comprenant une première surface réfléchissante et une seconde surface réfléchissante ; un premier élément optique et un second élément optique agencés à l'intérieur de la cavité optique ; un système atomique situé entre le premier élément optique et le second élément optique, le système atomique étant configuré pour stocker le champ de signal par l'intermédiaire d'une transition atomique ; et un ou plusieurs aimants configurés pour appliquer un champ magnétique axial à travers le système atomique.