WO2026131088 - METHOD OF SPLITTING A SEMICONDUCTOR SUBSTRATE AND SUBSTRATE SPLITTING APPARATUS
National phase entry is expected:
Publication Number
WO/2026/131088
Publication Date
25.06.2026
International Application No.
PCT/EP2025/085043
International Filing Date
02.12.2025
Title **
[English]
METHOD OF SPLITTING A SEMICONDUCTOR SUBSTRATE AND SUBSTRATE SPLITTING APPARATUS
[French]
PROCÉDÉ DE DIVISION D'UN SUBSTRAT SEMI-CONDUCTEUR ET APPAREIL DE DIVISION DE SUBSTRAT
Applicants **
INFINEON TECHNOLOGIES AG
Inventors
GALLE, Tom
SIKMANIS, Reyk
Priority Data
102024138673.8
18.12.2024
DE
Application details
| Total Number of Claims/PCT | * |
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International Searching Authority |
EPO
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| Translation |
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2217 | |
| EPO | Filing, Examination, Granting | 10547 | |
| Japan | Filing, Examination, Granting | 2336 | |
| South Korea | Filing, Examination, Granting | 2364 | |
| USA | Filing, Examination, Granting | 7140 |
Total:
24,604
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Abstract[English]
A method of splitting a semiconductor substrate includes forming a release layer (115) in a semiconductor substrate (110), wherein the semiconductor substrate (110) includes a first substrate portion (114) between a first surface (111) and the release layer (115) and a second substrate portion (116) between the release layer (115) and a second surface (112) opposite the first surface (111). An auxiliary layer (120) is formed on the first surface (111), wherein the auxiliary layer (120) and the semiconductor substrate (110) have different coefficients of thermal expansion. A main cooling plate (210) is brought into contact with a solid substrate composite (100) that includes the semiconductor substrate (110) and the auxiliary layer (120) in a cooling period. The main cooling plate (210) is cooled in the cooling period, wherein the auxiliary layer (120) is cooled. Mechanical vibrations are applied directly to the main cooling plate (210) in the cooling period, wherein the first substrate portion (114) is cleaved from the second substrate portion (116).[French]
L'invention concerne un procédé de division d'un substrat semi-conducteur consistant à former une couche détachable (115) dans un substrat semi-conducteur (110), le substrat semi-conducteur (110) comprenant une première partie de substrat (114) entre une première surface (111) et la couche détachable (115) et une seconde partie de substrat (116) entre la couche détachable (115) et une seconde surface (112) opposée à la première surface (111). Une couche auxiliaire (120) est formée sur la première surface (111), la couche auxiliaire (120) et le substrat semi-conducteur (110) ayant des coefficients de dilatation thermique différents. Une plaque de refroidissement principale (210) est mise en contact avec un composite de substrat solide (100) qui comprend le substrat semi-conducteur (110) et la couche auxiliaire (120) dans une période de refroidissement. La plaque de refroidissement principale (210) est refroidie dans la période de refroidissement, la couche auxiliaire (120) étant refroidie. Des vibrations mécaniques sont appliquées directement sur la plaque de refroidissement principale (210) dans la période de refroidissement, la première partie de substrat (114) étant clivée de la seconde partie de substrat (116).