WO2026003188 - THREE-DIMENSIONAL DEPOSITION OF A DEPOSITION STRUCTURE ON A SUBSTRATE
National phase entry is expected:
Publication Number
WO/2026/003188
Publication Date
02.01.2026
International Application No.
PCT/EP2025/068107
International Filing Date
26.06.2025
Title **
[English]
THREE-DIMENSIONAL DEPOSITION OF A DEPOSITION STRUCTURE ON A SUBSTRATE
[French]
DÉPÔT TRIDIMENSIONNEL D'UNE STRUCTURE DE DÉPÔT SUR UN SUBSTRAT
Applicants **
ETH ZURICH
Inventors
SHIH, Chih-Jen
OH, Jiwoo
ZENG, Shuangshuang
Priority Data
24185086.6
27.06.2024
EP
Application details
| Total Number of Claims/PCT | * |
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| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
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International Searching Authority |
EPO
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| * | |
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| Translation |
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2529 | |
| EPO | Filing, Examination, Granting | 12898 | |
| Japan | Filing, Examination, Granting | 2400 | |
| South Korea | Filing, Examination, Granting | 2473 | |
| USA | Filing, Examination, Granting | 6340 |
Total:
26,640
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Abstract[English]
A method of producing a deposition structure (1) on a substrate (2) comprises the steps of i) providing at least one depositor (3) for depositing at least one material (6), ii) providing at least one mask (4) comprising a plurality of apertures (5, 5a,...), iii) providing at least one substrate (2), and iv) depositing at least one material (6) from the depositor (3). Part of the material (6) passes through the apertures (5, 5a,...) of the mask (4) and is deposited on a surface (7) of the substrate (2), whereby at least one deposition structure (1) is formed on the surface (7) of the substrate (2). At least one tilting angle (φ) between i) the substrate (2) and/or the mask (4) and ii) the depositor (3) is at least temporarily changed before and/or during the deposition of the material (6). Additionally or alternatively, at least one rotating angle (θ) between i) the substrate (2) and/or the mask (4) and ii) the depositor (3) is at least temporarily changed before and/or during the deposition of the material (6).[French]
L'invention concerne un procédé de production d'une structure de dépôt (1) sur un substrat (2) comprenant les étapes consistant à i) fournir au moins un organe de dépôt (3) pour déposer au moins un matériau (6), ii) fournir au moins un masque (4) comprenant une pluralité d'ouvertures (5, 5a, ...), iii) fournir au moins un substrat (2) et iv) déposer au moins un matériau (6) provenant de l'organe de dépôt (3). Une partie du matériau (6) passe à travers les ouvertures (5, 5a, ...) du masque (4) et est déposée sur une surface (7) du substrat (2), au moins une structure de dépôt (1) étant formée sur la surface (7) du substrat (2). Au moins un angle d'inclinaison (φ) entre i) le substrat (2) et/ou le masque (4) et ii) l'organe de dépôt (3) est au moins temporairement changé avant et/ou pendant le dépôt du matériau (6). En outre ou en variante, au moins un angle de rotation (θ) entre i) le substrat (2) et/ou le masque (4) et ii) l'organe de dépôt (3) est au moins temporairement changé avant et/ou pendant le dépôt du matériau (6).