WO2026017377 - BINUCLEAR METAL COMPLEXES AND THE USE THEREOF IN ORGANIC ELECTRONICS
National phase entry is expected:
Publication Number
WO/2026/017377
Publication Date
22.01.2026
International Application No.
PCT/EP2025/067950
International Filing Date
25.06.2025
Title **
[English]
BINUCLEAR METAL COMPLEXES AND THE USE THEREOF IN ORGANIC ELECTRONICS
[French]
COMPLEXES MÉTALLIQUES BINUCLÉAIRES ET LEUR UTILISATION DANS L'ÉLECTRONIQUE ORGANIQUE
Applicants **
CREDOXYS GMBH
Inventors
WOLTERING, Steffen
VOGEL, Till
PAPMEYER, Marcus
DOROK, Sascha
Priority Data
24189734.7
19.07.2024
EP
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
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| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| Number of Office Actions | * |
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International Searching Authority |
EPO
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Patent Delivery |
Send the Letters Patent by Courier
* |
| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2319 | |
| EPO | Filing, Examination, Granting | 9272 | |
| Japan | Filing, Examination, Granting | 2178 | |
| South Korea | Filing, Examination, Granting | 2043 | |
| USA | Filing, Examination, Granting | 7140 |
Total:
22,952
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Abstract[English]
The present invention relates to compounds of formula (I) as well as to their use as organic doping agent, as transport layer, as hole injection layer, as organic semiconductor itself, or as hole transport layer. The invention also relates to organic semiconductive materials, electronic components, semiconductor units, and doped semiconductor layers comprising the compounds of formula (I) as well as to a method to produce such a doped semiconductor layer.[French]
La présente invention concerne des composés de formule (I) ainsi que leur utilisation en tant qu'agent dopant organique, en tant que couche de transport, en tant que couche d'injection de trous, en tant que semi-conducteur organique lui-même, ou en tant que couche de transport de trous. L'invention concerne également des matériaux semi-conducteurs organiques, des composants électroniques, des unités semi-conductrices et des couches semi-conductrices dopées comprenant les composés de formule (I) ainsi qu'un procédé de fabrication d'une telle couche semi-conductrice dopée.