WO2025261909 - HALBLEITERELEMENT MIT RESISTIVER REGION IM SOURCE-GEBIET
National phase entry is expected:
Publication Number
WO/2025/261909
Publication Date
26.12.2025
International Application No.
PCT/EP2025/066523
International Filing Date
13.06.2025
Title **
[German]
HALBLEITERELEMENT MIT RESISTIVER REGION IM SOURCE-GEBIET
[English]
SEMICONDUCTOR ELEMENT HAVING A RESISTIVE REGION IN THE SOURCE REGION
[French]
ÉLÉMENT SEMI-CONDUCTEUR DOTÉ D'UNE RÉGION RÉSISTIVE DANS LA ZONE SOURCE
Applicants **
ROBERT BOSCH GMBH
Inventors
BARTOLF, Holger
COSTACHESCU, Dragos
FEILER, Wolfgang
SANTORO, Marco
MARTINEZ-LIMIA, Alberto
KREBS, Daniel
ALSMEIER, Jan-Hendrik
ZIEGLER, Johannes
Priority Data
102024205558.1
17.06.2024
DE
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| Number of Office Actions | * |
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International Searching Authority |
EPO
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Patent Delivery |
Send the Letters Patent by Courier
* |
| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 1938 | |
| EPO | Filing, Examination, Granting | 8201 | |
| Japan | Filing, Examination, Granting | 2045 | |
| South Korea | Filing, Examination, Granting | 1811 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
18,735
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Abstract[German]
Die Erfindung betrifft ein Halbleiterbauelement, vorzugsweise ein Leistungshalbleiterbauelement, vorzugsweise basierend auf einem Wide- Bandgap-Material, insbesondere aus Siliciumcarbid (SiC), mit einem aktiven Gebiet bestehend aus wenigstens einer aktiven Halbzelle, aufweisend in wenigstens einer, vorzugsweise in allen Halbzellen, eine Source-Region (9), welche in einem p-dotierten Gebiet (8) angeordnet ist und eine resistive Region (9c,9d) zur Erzeugung eines Spannungsabfalls im Kurzschlussfall aufweist.[English]
The invention relates to a semiconductor component, preferably a power semiconductor component, preferably a power semiconductor component based on a wide-band gap material, which is made of silicon carbide (SiC) in particular, comprising an active region consisting of at least one active half-cell, having a source region (9) in at least one half-cell, preferably in all half-cells, said source region being provided in a p-doped region (8) and having a resistive region (9c, 9d) for generating a voltage drop in the event of a short circuit.[French]
L'invention concerne un élément semi-conducteur, de préférence un élément semi-conducteur de puissance, de préférence basé sur un matériau à largeur de bande interdite, notamment en carbure de silicium (SiC), comportant une région active comprenant au moins une demi-cellule active ayant au moins une, de préférence dans toutes les demi-cellules, une région de source (9) disposée dans une région à dopage p (8) et une région résistive (9c,9d) destinée à générer une chute de tension en cas de court-circuit.