WO2025168273 - VERFAHREN ZUM HERSTELLEN EINES GEKOPPELTEN WAFERS
National phase entry is expected:
Publication Number
WO/2025/168273
Publication Date
14.08.2025
International Application No.
PCT/EP2024/087993
International Filing Date
20.12.2024
Title **
[German]
VERFAHREN ZUM HERSTELLEN EINES GEKOPPELTEN WAFERS
[English]
METHOD FOR PRODUCING A BONDED WAFER
[French]
PROCÉDÉ DE PRODUCTION D'UNE TRANCHE LIÉE
Applicants **
ROBERT BOSCH GMBH
Inventors
TOMASCHKO, Jochen
PRITSCHOW, Marcus
SCHULER, Raphael
Priority Data
102024201175.4
09.02.2024
DE
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
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| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| Number of Office Actions | * |
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International Searching Authority |
EPO
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
| * | |
| * | |
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
* |
| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2030 | |
| EPO | Filing, Examination, Granting | 8118 | |
| Japan | Filing, Examination, Granting | 2171 | |
| South Korea | Filing, Examination, Granting | 2044 | |
| USA | Filing, Examination, Granting | 5340 |
Total:
19,703
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Abstract[German]
Die Erfindung betrifft ein Verfahren zum Herstellen eines gekoppelten Wafers (100) mit einem Bereitstellen eines ersten MEMS-Wafers (110), wobei der erste MEMS-Wafer (110) eine erste Funktionsschicht (112) mit ersten MEMS-Strukturen (112'), einem davon unabhängigen Bereitstellen eines TSV-Wafers (120) mit Silizium-Durchkontaktierungen (150) und einem Verbinden einer ersten Seite (110a) des ersten MEMS-Wafers (110) mit einer ersten Seite (120a) des TSV-Wafers (120) derart, dass ein gekoppelter Wafer (100) erhalten wird.[English]
The invention relates to a method for producing a bonded wafer (100), the method comprising: providing a first MEMS wafer (110), the first MEMS wafer (110) having a first functional layer (112) with first MEMS structures (112'); independently providing a TSV wafer (120) with through-silicon vias (150); and bonding a first side (110a) of the first MEMS wafer (110) to a first side (120a) of the TSV wafer (120) in such a way that a bonded wafer (100) is obtained.[French]
L'invention concerne un procédé de production d'une tranche liée (100), le procédé comprenant : la fourniture d'une première tranche MEMS (110), la première tranche MEMS (110) ayant une première couche fonctionnelle (112) avec des premières structures MEMS (112') ; la fourniture indépendante d'une tranche TSV (120) avec des trous d'interconnexion traversants (150) ; et la liaison d'un premier côté (110a) de la première tranche MEMS (110) à un premier côté (120a) de la tranche TSV (120) de telle sorte qu'une tranche liée (100) est obtenue.