WO2024027952 - OPTIMIZED PROCESS FOR SILICON DEPOSITION
National phase entry is expected:
Publication Number
WO/2024/027952
Publication Date
08.02.2024
International Application No.
PCT/EP2023/025354
International Filing Date
28.07.2023
Title **
[English]
OPTIMIZED PROCESS FOR SILICON DEPOSITION
[French]
PROCÉDÉ OPTIMISÉ DE DÉPÔT DE SILICIUM
Applicants **
LYGIN, Alexander
Inventors
LYGIN, Alexander
Priority Data
22020368.1
02.08.2022
EP
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
| * | |
| Number of Office Actions | * |
| * | |
International Searching Authority |
EPO
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Natural Person
* |
| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Patent Delivery |
Send the Letters Patent by Courier
* |
| Translation |
|
* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2026 | |
| EPO | Filing, Examination, Granting | 6215 | |
| Japan | Filing, Examination, Granting | 2161 | |
| South Korea | Filing, Examination, Granting | 2056 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
17,198
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
SiCI) and tetrachlorosilane, (b) Partial thermal decomposition of the mixture (I) obtained in step (a) at a temperature not exceeding 800°C to obtain silicon and a mixture (II) comprising unreacted tetrachlorosilane, wherein the molar ratio of the unreacted tetrachlorosilane to the obtained silicon is in the range 0.8:1 to 10:1. (c) Optional feeding of the mixture (II) obtained in step (b) in step (a) followed by repeating steps (a) and (b).[French]
SiCI) et du tétrachlorosilane, (b) décomposition thermique partielle du mélange (I) obtenu à l'étape (a) à une température ne dépassant pas 800°C pour obtenir du silicium et un mélange (II) comprenant du tétrachlorosilane n'ayant pas réagi, le rapport molaire du tétrachlorosilane n'ayant pas réagi au silicium obtenu étant dans la plage de 0,8:1 à 10:1. (c) alimentation facultative du mélange (II) obtenu à l'étape (b) dans l'étape (a) suivie par la répétition des étapes (a) et (b).