WO2026026999 - LIGHT-EMITTING DIODE AND LIGHT-EMITTING DEVICE
National phase entry is expected:
Publication Number
WO/2026/026999
Publication Date
05.02.2026
International Application No.
PCT/CN2025/125367
International Filing Date
29.09.2025
Title **
[English]
LIGHT-EMITTING DIODE AND LIGHT-EMITTING DEVICE
[French]
DIODE ÉLECTROLUMINESCENTE ET DISPOSITIF ÉLECTROLUMINESCENT
[Chinese]
一种发光二极管及发光装置
Applicants **
HUBEI SANAN OPTOELECTRONICS CO., LTD.
Inventors
WU, Guangyao
HONG, Lingyuan
ZENG, Jiangbin
ZHAO, Kai
WAN, Yanli
LU, Chao
WANG, Qing
XU, Jin
Priority Data
202411027493.8
29.07.2024
CN
Application details
| Total Number of Claims/PCT | * |
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International Searching Authority |
CNIPA
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 1772 | |
| EPO | Filing, Examination, Granting | 12642 | |
| Japan | Filing, Examination, Granting | 2234 | |
| South Korea | Filing, Examination, Granting | 2232 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
23,620
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Abstract[English]
Provided in the present application is a light-emitting diode, comprising: a semiconductor stack, which comprises a first semiconductor layer, an active layer and a second semiconductor layer that are stacked in sequence; a transparent conductive layer, which is formed on the second semiconductor layer; a first pad electrode, which is formed on the first semiconductor layer and electrically connected to the first semiconductor layer; and a second pad electrode, which is formed on the second semiconductor layer and electrically connected to the second semiconductor layer, wherein the distance between the transparent conductive layer and the second semiconductor layer ranges from 0.5 μm to 3 μm, and the distance therebetween is equal at all points.[French]
La présente invention concerne une diode électroluminescente, comprenant : un empilement semi-conducteur, qui comprend une première couche semi-conductrice, une couche active et une seconde couche semi-conductrice qui sont empilées en séquence ; une couche conductrice transparente, qui est formée sur la seconde couche semi-conductrice ; une première électrode formant pastille, qui est formée sur la première couche semi-conductrice et connectée électriquement à la première couche semi-conductrice ; et une seconde électrode formant pastille, qui est formée sur la seconde couche semi-conductrice et connectée électriquement à la seconde couche semi-conductrice, la distance entre la couche conductrice transparente et la seconde couche semi-conductrice étant comprise entre 0,5 µm et 3 µm, et la distance entre celles-ci étant identique en tous points.[Chinese]
本申请提供了一种发光二极管，包括半导体叠层，包括依次堆叠的第一半导体层、有源层以及第二半导体层；透明导电层，形成于所述第二半导体层上；第一焊盘电极，形成于所述第一半导体层上，与所述第一半导体层电连接；第二焊盘电极，形成于所述第二半导体层上，与所述第二半导体层电连接；其中，所述透明导电层和所述第二半导体层之间的距离介于0.5~3μm，且所述透明导电层和所述第二半导体层之间的距离处处相等。