WO2026108020 - MICRO LED STRUCTURE, EPITAXIAL LAYER AND MANUFACTURING METHOD FOR THE EPITAXIAL LAYER
National phase entry is expected:
Publication Number
WO/2026/108020
Publication Date
28.05.2026
International Application No.
PCT/CN2025/080406
International Filing Date
04.03.2025
Title **
[English]
MICRO LED STRUCTURE, EPITAXIAL LAYER AND MANUFACTURING METHOD FOR THE EPITAXIAL LAYER
[French]
STRUCTURE DE MICRO-DEL, COUCHE ÉPITAXIALE ET PROCÉDÉ DE FABRICATION DE LA COUCHE ÉPITAXIALE
Applicants **
JADE BIRD DISPLAY (SHANGHAI) LIMITED
Inventors
LI, Jingyue
JIN, Guangrong
Priority Data
PCT/CN2024/133677
22.11.2024
CN
Application details
| Total Number of Claims/PCT | * |
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International Searching Authority |
CNIPA
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2324 | |
| EPO | Filing, Examination, Granting | 22286 | |
| Japan | Filing, Examination, Granting | 2824 | |
| South Korea | Filing, Examination, Granting | 3470 | |
| USA | Filing, Examination, Granting | 7940 |
Total:
38,844
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Abstract[English]
A micro LED structure includes a first type semiconductor layer, a light emitting layer formed on the first type semiconductor layer; and a second type semiconductor layer formed on the light emitting layer. A top surface of the second type semiconductor layer includes a plurality of bulges.[French]
Une structure de micro-DEL comprend une couche semi-conductrice d'un premier type, une couche électroluminescente formée sur la couche semi-conductrice du premier type ; et une couche semi-conductrice d'un second type formée sur la couche électroluminescente. Une surface supérieure de la couche semi-conductrice du second type comprend une pluralité de renflements.