WO2025246244 - METHOD FOR MEASURING FILM THICKNESS IN SITU, REFERENCE SPECTRUM GENERATION METHOD AND DEVICE
National phase entry is expected:
Publication Number
WO/2025/246244
Publication Date
04.12.2025
International Application No.
PCT/CN2024/135882
International Filing Date
29.11.2024
Title **
[English]
METHOD FOR MEASURING FILM THICKNESS IN SITU, REFERENCE SPECTRUM GENERATION METHOD AND DEVICE
[French]
PROCÉDÉ DE MESURE D'ÉPAISSEUR DE FILM IN SITU, PROCÉDÉ DE GÉNÉRATION DE SPECTRE DE RÉFÉRENCE ET DISPOSITIF
[Chinese]
用于原位测量膜厚的方法、参考光谱生成方法及设备
Applicants **
BEIJING TSD SEMICONDUCTOR CO., LTD.
Inventors
MENG, Weitao
ZHOU, Huiyan
JIANG, Jile
Priority Data
202410682419.3
29.05.2024
CN
202410682207.5
29.05.2024
CN
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
| * | |
| Number of Office Actions | * |
| * | |
International Searching Authority |
CNIPA
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Patent Delivery |
Send the Letters Patent by Courier
* |
| Translation |
|
* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2005 | |
| EPO | Filing, Examination, Granting | 15697 | |
| Japan | Filing, Examination, Granting | 2431 | |
| South Korea | Filing, Examination, Granting | 2658 | |
| USA | Filing, Examination, Granting | 5340 |
Total:
28,131
Contact Us
Abstract[English]
The present invention provides a method for measuring a film thickness in situ, a reference spectrum generation method and a device. The reference spectrum generation method comprises: obtaining a spectrum calculation model which is provided with a first-type layer and a second-type layer, wherein the second-type layer is located between the first-type layer and a wafer film; determining spectral parameters of the first-type layer, the second-type layer, the wafer film and a wafer substrate; and using the spectral parameters and the spectral calculation model to calculate reference spectra at different given thicknesses of the wafer film.[French]
La présente invention concerne un procédé de mesure d'une épaisseur de film in situ, un procédé de génération de spectre de référence et un dispositif. Le procédé de génération de spectre de référence consiste à : obtenir un modèle de calcul de spectre qui est pourvu d'une couche de premier type et d'une couche de second type, la couche de second type étant située entre la couche de premier type et un film de tranche ; déterminer des paramètres spectraux de la couche de premier type, de la couche de second type, du film de tranche et d'un substrat de tranche ; et utiliser les paramètres spectraux et le modèle de calcul spectral pour calculer des spectres de référence à différentes épaisseurs données du film de tranche.[Chinese]
本发明提供一种用于原位测量膜厚的方法、参考光谱生成方法及设备，所述方法包括：获取具有第一类层和第二类层的光谱计算模型，其中所述第二类层位于所述第一类层和晶圆薄膜之间；确定所述第一类层、所述第二类层、所述晶圆薄膜和晶圆基底的光谱参数；利用所述光谱参数和所述光谱计算模型计算不同给定所述晶圆薄膜的厚度下的参考光谱。