WO2025246243 - METHOD FOR IN-SITU MEASUREMENT OF FILM THICKNESS AND CHEMICAL MECHANICAL PLANARIZATION DEVICE
National phase entry is expected:
Publication Number
WO/2025/246243
Publication Date
04.12.2025
International Application No.
PCT/CN2024/135879
International Filing Date
29.11.2024
Title **
[English]
METHOD FOR IN-SITU MEASUREMENT OF FILM THICKNESS AND CHEMICAL MECHANICAL PLANARIZATION DEVICE
[French]
PROCÉDÉ DE MESURE IN SITU D'ÉPAISSEUR DE FILM ET DISPOSITIF DE PLANARISATION CHIMICO-MÉCANIQUE
[Chinese]
用于原位测量膜厚的方法及化学机械抛光设备
Applicants **
BEIJING TSD SEMICONDUCTOR CO., LTD.
Inventors
MENG, Weitao
ZHOU, Huiyan
JIANG, Jile
Priority Data
202410682381.X
29.05.2024
CN
Application details
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International Searching Authority |
CNIPA
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Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 1777 | |
| EPO | Filing, Examination, Granting | 12656 | |
| Japan | Filing, Examination, Granting | 2234 | |
| South Korea | Filing, Examination, Granting | 2254 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
23,661
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Abstract[English]
The present invention provides a method for in-situ measurement of film thickness and a chemical mechanical planarization device, the method comprising: on the basis of a reflection spectrum of a wafer film and an equivalent light source spectrum, generating an actually measured spectrum, the equivalent light source spectrum being data of the correspondence relationship between wavelength and light intensity generated by using reflected light passing through a planarization solution and a dielectric layer between the planarization solution and a collimating light source probe; matching the actually measured spectrum with a reference spectrum library; and obtaining a wafer film thickness corresponding to a reference spectrum matching the actually measured spectrum and using said thickness as a measurement result.[French]
La présente invention concerne un procédé de mesure in situ d'épaisseur de film et un dispositif de planarisation chimico-mécanique, le procédé consistant à : sur la base d'un spectre de réflexion d'un film de tranche et d'un spectre de source de lumière équivalent, générer un spectre réellement mesuré, le spectre de source de lumière équivalent correspondant à des données de la relation de correspondance entre la longueur d'onde et l'intensité lumineuse générées en utilisant la lumière réfléchie traversant une solution de planarisation et une couche diélectrique entre la solution de planarisation et une sonde de source de lumière de collimation ; mettre en correspondance le spectre réellement mesuré avec une bibliothèque de spectres de référence ; et obtenir une épaisseur de film de tranche correspondant à un spectre de référence correspondant au spectre réellement mesuré et utiliser ladite épaisseur en tant que résultat de mesure.[Chinese]
本发明提供一种用于原位测量膜厚的方法及化学机械抛光设备，所述方法包括根据晶圆薄膜的反射光谱和等效光源光谱生成实测光谱，所述等效光源光谱是利用经过抛光液以及抛光液与准直光源探头之间的介质层的反射光所生成的波长与光强度对应关系数据；将所述实测光谱与参考光谱库进行匹配；获取与所述实测光谱匹配的参考光谱所对应的晶圆薄膜厚度作为检测结果。