WO2025246242 - METHOD AND DEVICE FOR DETERMINING PARAMETERS OF NEAR-SURFACE LAYER MEDIUM IN WAFER GRINDING SCENARIO
National phase entry is expected:
Publication Number
WO/2025/246242
Publication Date
04.12.2025
International Application No.
PCT/CN2024/135875
International Filing Date
29.11.2024
Title **
[English]
METHOD AND DEVICE FOR DETERMINING PARAMETERS OF NEAR-SURFACE LAYER MEDIUM IN WAFER GRINDING SCENARIO
[French]
PROCÉDÉ ET DISPOSITIF DE DÉTERMINATION DE PARAMÈTRES D'UN SUPPORT DE COUCHE PROCHE DE LA SURFACE DANS UN SCÉNARIO DE RECTIFICATION DE TRANCHE
[Chinese]
晶圆磨削场景中近表面层介质的参数确定方法及设备
Applicants **
BEIJING TSD SEMICONDUCTOR CO., LTD.
Inventors
JIANG, Jile
MENG, Weitao
ZHOU, Huiyan
Priority Data
202410682451.1
29.05.2024
CN
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International Searching Authority |
CNIPA
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The Standard Agent's Assignment
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Legal Entity
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Chapter I
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Send the Letters Patent by Courier
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 1693 | |
| EPO | Filing, Examination, Granting | 11584 | |
| Japan | Filing, Examination, Granting | 2130 | |
| South Korea | Filing, Examination, Granting | 2056 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
22,203
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Abstract[English]
Provided in the present invention are a method and device for determining parameters of a near-surface layer medium in a wafer grinding scenario. The method comprises: acquiring an actually measured spectrum in the state where the surface of a wafer has a first-type layer and a second-type layer, wherein the wafer comprises a wafer substrate and a wafer film, parameters of the wafer substrate and the wafer film are known parameters measured in advance, and the second-type layer is located between the first-type layer and the wafer film; using a spectral calculation model having parameters of the first-type layer and the second-type layer to generate theoretical spectra under different given parameters of the second-type layer; and on the basis of the theoretical spectra and the actually measured spectrum, determining a parameter range of the second-type layer.[French]
La présente invention concerne un procédé et un dispositif de détermination de paramètres d'un support de couche proche de la surface dans un scénario de rectification de tranche. Le procédé consiste à : acquérir un spectre réellement mesuré dans l'état dans lequel la surface d'une tranche présente une couche de premier type et une couche de second type, la tranche comprenant un substrat de tranche et un film de tranche, des paramètres du substrat de tranche et du film de tranche étant des paramètres connus mesurés à l'avance, et la couche de second type étant située entre la couche de premier type et le film de tranche ; utiliser un modèle de calcul spectral présentant des paramètres de la couche de premier type et de la couche de second type pour générer des spectres théoriques sous différents paramètres donnés de la couche de second type ; et sur la base des spectres théoriques et du spectre réellement mesuré, déterminer une plage de paramètres de la couche de second type.[Chinese]
本发明提供一种晶圆磨削场景中近表面层介质的参数确定方法及设备，所述方法包括：获取晶圆表面具有第一类层和第二类层状态下的实测光谱，其中所述晶圆包括晶圆基底和晶圆薄膜，所述晶圆基底和所述晶圆薄膜的参数是预先测量的已知参数，所述第二类层位于所述第一类层和所述晶圆薄膜之间；利用具有第一类层和第二类层参数的光谱计算模型，生成不同给定第二类层的参数下的理论光谱；根据所述理论光谱和所述实测光谱确定所述第二类层的参数范围。