WO2025241395 - SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR DEVICE AND FORMING METHOD THEREFOR
National phase entry is expected:
Publication Number
WO/2025/241395
Publication Date
27.11.2025
International Application No.
PCT/CN2024/126302
International Filing Date
22.10.2024
Title **
[English]
SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR DEVICE AND FORMING METHOD THEREFOR
[French]
STRUCTURE SEMI-CONDUCTRICE, DISPOSITIF SEMI-CONDUCTEUR ET LEUR PROCÉDÉ DE FORMATION
[Chinese]
半导体结构和半导体器件及其形成方法
Applicants **
CXMT CORPORATION
Inventors
LIU, Chih-cheng
Priority Data
202410644060.0
20.05.2024
CN
Application details
| Total Number of Claims/PCT | * |
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International Searching Authority |
CNIPA
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| * | |
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 1862 | |
| EPO | Filing, Examination, Granting | 14118 | |
| Japan | Filing, Examination, Granting | 2327 | |
| South Korea | Filing, Examination, Granting | 2432 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
25,479
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Abstract[English]
A semiconductor structure, and a semiconductor device and a forming method therefor. The semiconductor structure comprises: a substrate; first trench groups, located in the substrate, each first trench group comprising first trenches; and a trench communication part, which communicates adjacent first trenches. The semiconductor structure has good performance.[French]
L'invention concerne une structure semi-conductrice, un dispositif semi-conducteur et leur procédé de formation. La structure semi-conductrice comprend : un substrat ; des premiers groupes de tranchées, situés dans le substrat, chaque premier groupe de tranchées comprenant des premières tranchées ; et une partie de communication de tranchées qui fait communiquer des premières tranchées adjacentes. La structure semi-conductrice présente de bonnes performances.[Chinese]
一种半导体结构和半导体器件及其形成方法，半导体结构，包括：衬底；第一沟槽组，位于衬底内；第一沟槽组包括第一沟槽；连通沟槽部，连通相邻的第一沟槽。上述半导体结构性能良好。