WO2025208806 - SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR PREPARING SEMICONDUCTOR STRUCTURE
National phase entry is expected:
Publication Number
WO/2025/208806
Publication Date
09.10.2025
International Application No.
PCT/CN2024/119984
International Filing Date
20.09.2024
Title **
[English]
SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR PREPARING SEMICONDUCTOR STRUCTURE
[French]
STRUCTURE SEMI-CONDUCTRICE, DISPOSITIF À SEMI-CONDUCTEUR ET PROCÉDÉ DE PRÉPARATION DE STRUCTURE SEMI-CONDUCTRICE
[Chinese]
半导体结构、半导体器件及半导体结构的制备方法
Applicants **
CXMT CORPORATION
Inventors
WU, Baorun
LIU, Zhongming
YANG, Xiaodong
Priority Data
202410389625.5
01.04.2024
CN
Application details
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International Searching Authority |
CNIPA
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| Translation |
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 1719 | |
| EPO | Filing, Examination, Granting | 11624 | |
| Japan | Filing, Examination, Granting | 2171 | |
| South Korea | Filing, Examination, Granting | 2115 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
22,369
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Abstract[English]
The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure, a semiconductor device, and a method for preparing a semiconductor structure. The semiconductor structure comprises: a substrate, a plurality of active columns arranged at intervals in a first direction and a second direction being formed in the substrate, the plurality of active columns all extending in a third direction, and the first direction intersecting the second direction and being perpendicular to the third direction; and capacitor contact structures, each of which covers a top surface of an active column and is connected to a capacitor structure. A top surface of each capacitor contact structure is non-planar, and the projection area of the capacitor contact structure on a plane perpendicular to the third direction is larger than the projection area of the active column on the plane perpendicular to the third direction.[French]
La présente divulgation se rapporte au domaine technique des semi-conducteurs et concerne une structure semi-conductrice, un dispositif à semi-conducteur et un procédé de préparation d'une structure semi-conductrice. La structure semi-conductrice comprend : un substrat, une pluralité de colonnes actives disposées à des intervalles dans une première direction et une deuxième direction étant formées dans le substrat, la pluralité de colonnes actives s'étendant toutes dans une troisième direction, et la première direction croisant la deuxième direction et étant perpendiculaire à la troisième direction ; et des structures de contact de condensateur, chacune recouvrant une surface supérieure d'une colonne active et étant connectée à une structure de condensateur. Une surface supérieure de chaque structure de contact de condensateur est non plane et la zone de projection de la structure de contact de condensateur sur un plan perpendiculaire à la troisième direction est supérieure à la zone de projection de la colonne active sur le plan perpendiculaire à la troisième direction.[Chinese]
本公开提供了半导体结构、半导体器件及半导体结构的制备方法，涉及半导体技术领域。该半导体结构包括：衬底，衬底内形成有沿第一方向、第二方向间隔排布的多个有源柱，多个有源柱均沿第三方向延伸；第一方向与第二方向相交，且均垂直于第三方向；电容接触结构，电容接触结构覆盖有源柱的顶面，用以连接电容结构；电容接触结构的顶面为非平面，且电容接触结构在垂直于第三方向的平面上的投影面积大于有源柱在垂直于第三方向的平面上的投影面积。