WO2023236103 - METHOD OF METAL INTEGRATION FOR FABRICATING INTEGRATED DEVICE
National phase entry is expected:
Publication Number
WO/2023/236103
Publication Date
14.12.2023
International Application No.
PCT/CN2022/097621
International Filing Date
08.06.2022
Title **
[English]
METHOD OF METAL INTEGRATION FOR FABRICATING INTEGRATED DEVICE
[French]
PROCÉDÉ D'INTÉGRATION DE MÉTAL POUR FABRIQUER UN DISPOSITIF INTÉGRÉ
Applicants **
HUAWEI TECHNOLOGIES CO., LTD.
Inventors
CHEN, Yijian
LEONELLI, Daniele
LIU, Yanxiang
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| Number of Office Actions | * |
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International Searching Authority |
CNIPA
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2029 | |
| EPO | Filing, Examination, Granting | 14277 | |
| Japan | Filing, Examination, Granting | 2275 | |
| South Korea | Filing, Examination, Granting | 2210 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
25,531
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
The fabrication of integrated devices, for example, integrated semiconductor devices is disclosed. The method for metal integration can be used in a process flow for fabricating such an integrated device. The method is based on patterning different spacers and defining different metal structures using the spacers in two separated steps. In particular, metal structures of a first metal material (61) are processed in a different step than metal structure of a second metal material (91).[French]
L'invention concerne la fabrication de dispositifs intégrés, par exemple, des dispositifs à semi-conducteurs intégrés. Le procédé d'intégration de métal peut être utilisé dans un flux de traitement pour fabriquer un tel dispositif intégré. Le procédé est basé sur la formation de motifs sur différents espaceurs et la définition de différentes structures métalliques à l'aide des espaceurs en deux étapes séparées. En particulier, des structures métalliques d'un premier matériau métallique (61) sont traitées dans une étape différente par rapport à la structure métallique d'un second matériau métallique (91).